STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 4

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

Electrical characteristics
2
4/22
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
C
R
oss eq.
V
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
oss eq.
oss
iss
rss
gs
gd
G
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Doc ID 16832 Rev 4
V
V
V
f = 1 MHz open drain
V
V
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 50 V, V
=10 V (see
= ± 25 V
= V
= 10 V, I
=400 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 100 µA
= 6 A
=12 A,
= 0
Figure
GS
C
=125 °C
= 0
17)
Min.
Min.
500
2
-
-
-
-
307.5
Typ.
Typ.
0.28
816
4.5
4.6
60
27
15
3
3
oss
when V
Max.
Max.
0.32
100
100
1
4
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
V
V
Ω
Ω