STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 8

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
V
GS(th)
1.00
0.80
0.70
(norm)
1.10
0.90
-50
vs temperature
-25
0
25
I
D
=250µA
50
75
100
T
J
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
(°C)
Doc ID 16832 Rev 4
AM07208v1
Figure 15. Normalized on resistance vs
R
DS(on)
(norm)
0.5
2.1
1.7
1.3
0.9
-50
temperature
-25
0
25
I
D
50
=6A
75
100
T
J
(°C)
AM07209v1