TPC8012-H(TE12L,Q) Toshiba, TPC8012-H(TE12L,Q) Datasheet - Page 2

• Manufacturer Part Number: TPC8012-H(TE12L,Q)
• Description: MOSFET N-CH 200V 1.8A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8012-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8012-H(TE12L); TPC8012-H(TE12L,Q); TPC8012-HQTR; TPC8012-HTR; TPC8012-HTR

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
(Note 5)
TPC8012
H
* Weekly code: (Three digits)
DD
= 50 V, T
Characteristic
(a)
ch
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 1.0 mH, R
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
Max
65.8
125
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 1.8 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPC8012-H
2006-01-17