TPC8012-H(TE12L,Q) Toshiba, TPC8012-H(TE12L,Q) Datasheet - Page 5

• Manufacturer Part Number: TPC8012-H(TE12L,Q)
• Description: MOSFET N-CH 200V 1.8A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8012-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8012-H(TE12L); TPC8012-H(TE12L,Q); TPC8012-HQTR; TPC8012-HTR; TPC8012-HTR

10000
1000
100
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
0.8
10
0
1
0
−80
0.1
0
(1)
(2)
Common source
Common source
Pulse test
V GS = 0 V
Drain-source voltage V
−40
Ta = 25°C
f = 1 MHz
Ambient temperature Ta (
Ambient temperature Ta (
V GS = 10 V
40
Capacitance – V
0
1
R
DS (ON)
P
D
40
80
– Ta
I D = 2.8A,5.5A,11A
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
C rss
80
10
DS
DS
120
(V)
°
C oss
°
C iss
C)
C)
120
100
160
160
5
200
160
120
0.1
5.0
4.0
3.0
2.0
1.0
10
80
40
1
0
0
−80
0
0
V DS
Common source
Common source
V DS = 10 V
Ta = 25°C
Pulse test
−0.2
I D = 1 mA
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
4
10
Dynamic input/output
−0.4
0
characteristics
4.5
V DD = 40 V
I
8
DR
3
V
th
−0.6
– V
40
– Ta
1
DS
160 V
12
V GS = 0 V
−0.8
g
80
Common source
DS
80 V
(nC)
I D = 1.8 A
Ta = 25°C
Pulse test
16
°
(V)
C)
TPC8012-H
−1.0
120
2006-01-17
−1.2
160
20
20
16
12
8
4
0