TPC8012-H(TE12L,Q) Toshiba, TPC8012-H(TE12L,Q) Datasheet - Page 3

• Manufacturer Part Number: TPC8012-H(TE12L,Q)
• Description: MOSFET N-CH 200V 1.8A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8012-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8012-H(TE12L); TPC8012-H(TE12L,Q); TPC8012-HQTR; TPC8012-HTR; TPC8012-HTR

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
C
I
C
|Y
C
Q
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
t
t
iss
rss
gd
th
gs
fs
r
f
g
|
V
V
I
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
DR
V
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
GS
= 1.8 A
3
= 1.8 A, V
(Ta = 25°C)
= ±25 V, V
= 200 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 160 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
= 10 μs
= 1 mA
= 0.9 A
DS
GS
= 0.9 A
GS
⎯
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V,
I
D
V
DD
= 0.9 A
∼ − 100 V
V
OUT
0.65
Min
200
Min
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.28
1.35
Typ.
440
260
80
23
28
22
73
11
⎯
⎯
⎯
⎯
⎯
⎯
6
5
TPC8012-H
2006-01-17
0.40
−1.5
Max
Max
±10
100
5.0
7.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μA
μA
pF
ns
Ω
V
V
S
A
V