TPC8012-H(TE12L,Q) Toshiba, TPC8012-H(TE12L,Q) Datasheet - Page 6

• Manufacturer Part Number: TPC8012-H(TE12L,Q)
• Description: MOSFET N-CH 200V 1.8A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8012-H(TE12L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC8012-H(TE12L); TPC8012-H(TE12L,Q); TPC8012-HQTR; TPC8012-HTR; TPC8012-HTR

0.01
0.1
10
1
0.1
I D MAX (Pulse) *
Curves must be derated
linearly with increase in
temperature.
* Single-pulse
1000
100
0.1
10
Drain-source voltage V
Ta = 25°C
1
0.001
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
1
Safe operating area
0.01
10
10 ms *
DS
100
t =1 ms *
0.1
(V)
V DSS
MAX
Pulse width t
1000
6
r
th
− t
1
w
w
(s)
10
100
Single - pulse
(2)
(1)
1000
TPC8012-H
2006-01-17