BSO200P03S Infineon Technologies, BSO200P03S Datasheet

no-image

BSO200P03S

Manufacturer Part Number
BSO200P03S
Description
MOSFET P-CH 30V 7.4A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO200P03S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
2330pF @ 25V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
20 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 9.1 A
Power Dissipation
1.56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO200P03SNT
BSO200P03ST
SP000014959

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO200P03S
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO200P03S
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO200P03S H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO200P03SH
Manufacturer:
CRYDOM
Quantity:
124
Part Number:
BSO200P03SH
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.21
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• dv /dt rated
• Ideal for fast switching buck converter
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS™-P Power-Transistor
Type
BSO200P03S
j
Package
P-DSO-8
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
Marking
200P3S
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
page 1
A
A
A
j,max
A
=-9.1 A, R
=-9.1 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
1)
1)
2)
1)
DS
GS
Product Summary
V
R
I
=20 V,
D
=25 Ω
DS
DS(on),max
≤10 secs
2.36
-9.1
-7.3
-55 ... 150
55/150/56
Value
±25
-37
P-DSO-8
98
-6
steady state
1.56
-7.4
-5.9
BSO200P03S
20
-9.1
-30
53
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-22

Related parts for BSO200P03S

BSO200P03S Summary of contents

Page 1

... =70 ° =25 °C D,pulse A =25 Ω =-9 =-9 = /dt di /dt =-200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSO200P03S - mΩ -9.1 A P-DSO-8 53 Value Unit ≤10 secs steady state -9.1 -7.4 A -7.3 -5.9 - kV/µs ±25 V 2.36 1.56 W -55 ... 150 °C 55/150/56 2008-04-22 ...

Page 2

... =-250µA (BR)DSS GS(th) I =-100 µ =- DSS T =25 ° =- =125 ° =- GSS =- DS(on) I =-9 |>2 DS(on)max =-7 (one layer, 70 µm thick) copper area for drain page 2 BSO200P03S Values Unit min. typ. max K 110 - - 150 , - - - -1.5 - -0.1 -1 µA - -10 -100 - -10 -100 nA - 16.7 20 2008-04-22 ...

Page 3

... MHz DS C rss t d(on Ω d(off g( plateau oss =25 ° S,pulse =-9 =25 ° = =-9 /dt =100 A/µ page 3 BSO200P03S Values min. typ. max. - 1750 2330 - 470 625 - 390 580 - -4.8 -6.4 - -2.6 -3.5 - -14 - -16 -24 - -40 - - -36.5 - -0.88 -1 Unit 2008-04-22 ...

Page 4

... Rev. 1.21 2 Drain current I =f 120 160 [° Max. transient thermal impedance Z =f(t thJS p parameter µs 1 µs 100 µ 100 [V] DS page 4 BSO200P03S |≥ ≤ 120 T [° 100 0.5 1 0.2 10 0.1 0.05 0. 0.01 -1 single pulse 0.1 -2 0.01 0.00001 0.0001 0.001 0.01 0 ...

Page 5

... DS j parameter - Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.21 6 Typ. drain-source on resistance R =f(I DS(on) parameter -2 Typ. forward transconductance g =f °150 C ° [V] GS page 5 BSO200P03S ); T =25 ° -3.2 V -3.5 V -2.7 V -4 [A] D =25 ° [ 2008-04-22 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 100 10 Ciss Coss 1 0 [V] DS page 6 BSO200P03S =-100 µ max. typ. min. - 100 140 T [° 150 °C, typ 25 °C, 98% 150 °C, 98% 25 °C, typ 0 [V] SD 180 1.5 2008-04-22 ...

Page 7

... AV GS parameter: T j(start Drain-source breakdown voltage =-250 µ BR(DSS -60 - Rev. 1.21 14 Typ. gate charge V =f(Q GS parameter ° °100 C °125 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO200P03S ); I =-4.5 A pulsed gate [nC] gate 15 ate 2008-04-22 ...

Page 8

... Package Outline P-DSO-8: Outline Dimensions in mm Rev. 1.21 page 8 BSO200P03S 2008-04-22 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.21 page 9 BSO200P03S 2008-04-22 ...

Related keywords