BSO200P03S Infineon Technologies, BSO200P03S Datasheet - Page 8

• Manufacturer Part Number: BSO200P03S
• Description: MOSFET P-CH 30V 7.4A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO200P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 9.1 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO200P03SNT; BSO200P03ST; SP000014959

BSO200P03S
Package Outline
P-DSO-8: Outline
Dimensions in mm
Rev. 1.21
page 8
2008-04-22