BSO200P03S Infineon Technologies, BSO200P03S Datasheet - Page 5

• Manufacturer Part Number: BSO200P03S
• Description: MOSFET P-CH 30V 7.4A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO200P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 9.1 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO200P03SNT; BSO200P03ST; SP000014959

Rev. 1.21
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
40
35
30
25
20
15
10
40
30
20
10
5
0
0
DS
GS
0
0
); T
); |V
j
=25 °C
j
GS
DS
-10 V
|>2|I
1
-4.5 V
D
|R
1
DS(on)max
-V
-V
C °150
DS
GS
2
[V]
[V]
C °25
2
3
-2.3 V
-2.7 V
-2.5 V
-3.2 V
-3.5 V
-3 V
page 5
3
4
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
60
50
40
30
20
10
40
30
20
10
0
0
D
=f(I
0
0
); T
2.5 V
D
j
); T
=25 °C
-2.7 V
GS
j
=25 °C
10
-3 V
10
-3.2 V
-I
-I
D
D
20
[A]
[A]
20
-3.5 V
BSO200P03S
-4.5 V
-10 V
30
2008-04-22
40
30