BSO200P03S Infineon Technologies, BSO200P03S Datasheet - Page 4

• Manufacturer Part Number: BSO200P03S
• Description: MOSFET P-CH 30V 7.4A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO200P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 9.1 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO200P03SNT; BSO200P03ST; SP000014959

Rev. 1.21
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
2.5
1.5
0.5
3
2
1
0
DS
10
10
0
10
10
10
A
); T
); t
-1
-2
2
1
0
10
100
0.1
0.01
10
1
0.1
p
-1
A
p
≤10 s
=25 °C
40
1)
; D =0
10
1
0
limited by on-state
resistance
T
-V
A
80
[°C]
DS
[V]
10
10 ms
10
DC
100 µs
1 ms
1
120
10 µs
1 µs
page 4
160
10
100
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJS
=f(T
10
=f(t
8
6
4
2
0
A
10
10
10
10
10
); |V
0
p
-1
-2
)
2
1
0
10
100
0.01
10
0.1
0.00001
1
0.02
0.05
0.1
-5
GS
0.5
0.2
0.01
|≥10 V; t
single pulse
p
/T
10
0.0001
40
-4
p
10
≤10 s
0.001
-3
T
A
80
t
[°C]
10
p
0.01
[s]
-2
10
BSO200P03S
0.1
-1
120
10
1
0
2008-04-22
160
10
10
1