2SJ598-Z-E2-AY Renesas Electronics America, 2SJ598-Z-E2-AY Datasheet - Page 8

• Manufacturer Part Number: 2SJ598-Z-E2-AY
• Description: MOSFET P-CH 60V TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SJ598-Z-E2-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
–100
–0.1
–10
–1
10 μ
V
R
V
I
DD
GS
G
AS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
= 25 Ω
= –30 V
= –20 → 0 V
= –12 A
100 μ
L - Inductive Load - H
1 m
Data Sheet D14656EJ5V0DS
10 m
160
140
120
100
80
60
40
20
0
25
Starting T
SINGLE AVALANCHE ENERGY
DERATING FACTOR
50
ch
- Starting Channel Temperature -
75
100
125
R
V
V
I
AS
G
GS
DD
= 25 Ω
≤ –12 A
= –30 V
= –20 → 0 V
150
˚C
2SJ598