2SJ598-Z-E2-AY Renesas Electronics America, 2SJ598-Z-E2-AY Datasheet - Page 7

• Manufacturer Part Number: 2SJ598-Z-E2-AY
• Description: MOSFET P-CH 60V TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SJ598-Z-E2-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
1000
300
250
200
150
100
100
100
50
10
10
0
1
–0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
−50
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
ch
V
DS
- Channel Temperature -
- Drain to Source Voltage - V
I
F
0
–1
- Drain Current - A
1
V
50
GS
= –4.0 V
–10
10
100
di/dt = 100 A/ s
V
GS
–10 V
V
f = 1 MHz
= 0 V
GS
˚C
I
D
= 0 V
= –6 A
150
C
Data Sheet D14656EJ5V0DS
C
C
iss
oss
rss
–100
μ
100
–0.01
1000
–100
–60
–50
–40
–30
–20
–10
–0.1
100
–10
10
–1
0
1
–0.1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
0
Pulsed
t
V
d(on)
GS
t
V
r
2
SWITCHING CHARACTERISTICS
SD
= –10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
- Source to Drain Voltage - V
4
Q
I
D
G
–0.5
–1
- Drain Current - A
V
- Gate Charge - nC
DD
6
V
= –48 V
t
d(off)
DS
–30 V
–12 V
8
0 V
10
–1.0
–10
t
f
V
R
V
12
V
DD
GS
G
GS
I
= 0 Ω
D
= –10 V
= –30 V
= –12 A
14
–100
–1.5
2SJ598
16
–12
–10
–8
–6
–4
–2
0
5