2SJ598-Z-E2-AY Renesas Electronics America, 2SJ598-Z-E2-AY Datasheet - Page 6

• Manufacturer Part Number: 2SJ598-Z-E2-AY
• Description: MOSFET P-CH 60V TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SJ598-Z-E2-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
–0.01
–100
0.01
–0.1
300
200
100
100
–10
0.1
–1
10
–0.01
–0.1
0
1
–1
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
GS
–0.1
–2
- Gate to Source Voltage - V
I
D
I
D
–1
- Drain Current - A
- Drain Current - A
V
GS
= –4.0 V
–3
–1
–4.5 V
–10 V
T
A
=
T
−55˚C
150˚C
A
–10
25˚C
75˚C
=
150˚C
−50˚C
–10
–4
75˚C
25˚C
V
Pulsed
V
Pulsed
DS
DS
= –10 V
= –10 V
Pulsed
Data Sheet D14656EJ5V0DS
–100
–100
–5
–1.0
–4.0
–3.0
–2.0
200
150
100
–50
–40
–30
–20
–10
50
0
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0
–50
V
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GS
V
ch
–2
DS
–5
- Channel Temperature -
- Gate to Source Voltage - V
- Drain to Source Voltage - V
0
V
GS
= –10 V
–4
–10
50
–6
100
I
D
–15
= –6 A
V
I
–4.0 V
D
DS
= –1 mA
–8
= –10 V
Pulsed
˚C
Pulsed
150
–20
–10
2SJ598