PSMN004-36B,118 NXP Semiconductors, PSMN004-36B,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN004-36B,118
• Description: MOSFET N-CH 36V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-36B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 36V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 20V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056874118; PSMN004-36B /T3; PSMN004-36B /T3

Philips Semiconductors
9397 750 08621
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
R DS(on)
j
j
0.008
0.006
0.004
0.002
= 25 C
= 25 C
(A)
0.01
( )
I D
function of drain-source voltage; typical values.
of drain current; typical values.
80
60
40
20
0
0
0
0
T j = 25 ºC
0.2
10 V
20
5 V
0.4
2.8 V
40
0.6
V GS = 2.6V
60
V GS = 2 V
0.8
T j = 25 ºC
I D (A)
V DS (V)
2.6 V
2.4 V
2.2 V
2.8 V
03ag45
03ag46
10 V
5 V
80
1
Rev. 01 — 19 November 2001
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
= 25 C and 175 C; V
=
(A)
function of gate-source voltage; typical values.
factor as a function of junction temperature.
I D
1.6
1.2
0.8
0.4
a
80
60
40
20
---------------------------- -
R
0
2
0
-0.2
-60
DSon 25 C
R
V DS > I D x R DS(ON)
DSon
PSMN004-36P/36B
0.6
0
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
DS
175 ºC
1.4
60
I
D
x R
DSON
120
2.2
T j = 25 ºC
V GS (V)
T j (
o
03ag47
03aa27
C)
180
3
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