PSMN004-36B,118 NXP Semiconductors, PSMN004-36B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN004-36B,118
• Description: MOSFET N-CH 36V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-36B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 36V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 20V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056874118; PSMN004-36B /T3; PSMN004-36B /T3

Philips Semiconductors
9397 750 08621
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
mb
der
P der
(%)
function of mounting base temperature.
120
= 25 C; I
80
40
0
=
(A)
I D
0
10 3
10 2
---------------------- -
P
10
1
tot 25 C
P
1
tot
DM
R DS(on) = V DS / I D
is single pulse.
50
100%
100
150
T mb (
03aa16
o
C)
200
Rev. 01 — 19 November 2001
10
DC
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
I
der
120
(%)
function of mounting base temperature.
I D
80
40
0
=
0
-------------------
I
D 25 C
I
D
PSMN004-36P/36B
50
V DS (V)
100%
t p = 10 us
100 us
1 ms
10 ms
100 ms
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
100
150
03ag44
Tmb (ºC)
10 2
03ag42
200
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