SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 10

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
8. Revision history
Table 6:
9397 750 12899
Product data
Rev Date
02
01
20040217
20010713
Revision history
CPCN
-
-
Description
Product data (9397 750 12899)
Modifications:
Product data (9397 750 08412)
•
•
•
•
•
•
•
•
•
Updated to latest standards.
Section 3 “Ordering information”
Section 5 “Thermal characteristics”
Section 6 “Characteristics”
Section 6 “Characteristics”
Section 6 “Characteristics”
Section 6 “Characteristics”
Section 6 “Characteristics”
Section 6 “Characteristics” Figure
Rev. 02 — 17 February 2004
typical R
typical Q
t
V
t
d(on)
rr
SD
conditions and typical value modified
, t
conditions, and typical value modified.
added.
r
, t
5, 6, 7, 11,
clarification of thermal resistance table.
DSon
g(tot)
d(off)
, Q
value improved.
and t
N-channel TrenchMOS™ logic level FET
gs
and Q
12
f
conditions and typical values modified.
and
gd
13
values improved.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
modified.
SI4800
10 of 12