SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 3

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
9397 750 12899
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P der
P
(%)
10 -1
10 -2
120
(A)
amb
10 2
I D
der
80
40
10
0
1
function of ambient temperature.
10 -1
= 25 C; I
0
=
---------------------- -
P
tot 25 C
Limit R DSon = V DS / I D
P
tot
DM
50
is single pulse.
100%
100
150
T amb ( C)
1
03aa11
Rev. 02 — 17 February 2004
200
DC
Fig 2. Normalized continuous drain current as a
I
I der
(%)
120
der
80
40
0
function of ambient temperature.
=
0
-------------------
I
D 25 C
N-channel TrenchMOS™ logic level FET
10
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
t p = 10 s
1 ms
10 ms
100 ms
10 s
150
T amb ( C)
03ap01
03aa19
SI4800
10 2
200
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