SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 8

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
9397 750 12899
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
8
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0.2
0.4
T j = 150 C
GS
0.6
= 0 V
0.8
25 C
V SD (V)
003aaa329
Rev. 02 — 17 February 2004
1
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 8 A; V
5
4
3
2
1
0
charge; typical values.
0
N-channel TrenchMOS™ logic level FET
DD
= 15 V
5
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
Q G (nC)
003aaa625
SI4800
15
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