SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 7

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
9397 750 12899
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
2.5
1.5
0.5
GS
= 250 A; V
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
max
typ
min
60
(pF)
C
10 4
10 3
10 2
10
120
10 -1
T j ( C)
03aq19
Rev. 02 — 17 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
10
T
(A)
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
003aaa328
C iss
C oss
C rss
N-channel TrenchMOS™ logic level FET
DS
10 2
= 5 V
1
min
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
2
max
V GS (V)
03aa36
SI4800
3
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