SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 4

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12899
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
th(j-a)
Z th(j-amb)
(K/W)
T
10 -1
10 -2
10 2
amb
10
1
10 -4
thermal resistance from junction to ambient
= 25 C
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -3
10 -2
Rev. 02 — 17 February 2004
10 -1
Conditions
mounted on a printed-circuit board;
minimum footprint; t
1
N-channel TrenchMOS™ logic level FET
p
10
10 s;
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Figure 4
P
10 2
t p
T
Min Typ Max Unit
-
t p (s)
=
-
t p
T
03af83
SI4800
t
10 3
50
4 of 12
K/W