NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 3

• Manufacturer Part Number: NTMD4184PFR2G
• Description: MOSFET P-CH 30V 2.3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4184PFR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 770mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
0.30
0.25
0.20
0.15
0.10
0.05
10
8
6
4
2
0
0
2
Figure 3. On-Resistance vs. Gate Voltage
Figure 1. On-Region Characteristics
Characteristic
V
V
5.0 V
DS
Parameter
GS
2
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-TO-SOURCE VOLTAGE (V)
10 V
4
4
V
GS
= 4.5 V
6
6
(T
J
= 25°C unless otherwise noted)
T
J
TYPICAL CHARACTERISTICS
= 25°C
ID = 3 A
T
Symbol
Symbol
J
8
= 25°C
V
I
R
8
F
2.6 V
http://onsemi.com
3.8 V
3.6 V
3.4 V
3.2 V
NTMD4184PF
4.2 V
4.0 V
2.8 V
3.0 V
10
10
(T
V
V
I
I
F
F
R
R
J
3
= 1.0 A
= 2.0 A
= 10 V
= 20 V
= 25°C unless otherwise noted)
Test Conditions
Test Condition
0.25
0.20
0.15
0.10
0.05
10
8
6
4
2
0
0
2
Figure 4. On-Resistance vs. Drain Current and
T
V
T
T
T
T
J
T
T
T
T
DS
J
J
J
J
J
J
J
J
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
3
= 25°C
= 25°C
= 25°C
= 25°C
V
≥ 10 V
Figure 2. Transfer Characteristics
1
GS
, GATE-TO-SOURCE VOLTAGE (V)
4
I
T
D
J
, DRAIN CURRENT (A)
2
= 125°C
Gate Voltage
Min
Min
V
V
GS
GS
5
= 4.5 V
= 10 V
3
0.001
0.004
T
0.43
0.35
0.45
Typ
Typ
0.5
1.2
2.0
J
6
= -55°C
4
T
J
7
= 25°C
Max
Max
0.50
0.39
0.58
0.53
0.02
0.05
14
18
5
8
Unit
Unit
mA
V
6
9