NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 4

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NTMD4184PFR2G

Manufacturer Part Number
NTMD4184PFR2G
Description
MOSFET P-CH 30V 2.3A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMD4184PFR2G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
95 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
770mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.095 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
2.31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMD4184PFR2G
Manufacturer:
ON Semiconductor
Quantity:
1 600
Part Number:
NTMD4184PFR2G
Manufacturer:
ON/安森美
Quantity:
20 000
400
350
300
250
200
150
100
100
50
10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
1
0
1
-50
V
Figure 9. Resistive Switching Time Variation
V
ID = 1.0 A
V
GS
DD
GS
Figure 5. On-Resistance Variation with
-25
ID = 3 A
V
= 0 V
t
GS
= 15 V
= 10 V
d(on)
Figure 7. Capacitance Variation
T
DRAIN-TO-SOURCE VOLTAGE (V)
5
t
= 10 V
J
r
, JUNCTION TEMPERATURE (°C)
R
0
G
vs. Gate Resistance
, GATE RESISTANCE (W)
Temperature
25
10
10
50
15
75
TYPICAL CHARACTERISTICS
100
T
20
J
= 25°C
C
http://onsemi.com
C
C
125
t
t
NTMD4184PF
d(off)
f
oss
iss
rss
100
25
150
4
10,000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
10
10
8
6
4
2
0
0
0
0
0
Figure 10. Diode Forward Voltage vs. Current
V
Figure 6. Drain-to-Source Leakage Current
GS
Drain-to-Source Voltage vs. Total Charge
V
T
J
GS
Q1
= 25°C
= 0 V
V
V
= 0 V
5
DS
SD
1
0.2
Figure 8. Gate-to-Source and
, DRAIN-TO-SOURCE VOLTAGE (V)
, SOURCE-TO-DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Q2
10
2
0.4
vs. Voltage
QT
T
T
J
J
= 150°C
= 125°C
15
3
0.6
20
4
0.8
T
ID = 3 A
25
J
5
= 25°C
V
GS
1.0
30
6

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