NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 6

• Manufacturer Part Number: NTMD4184PFR2G
• Description: MOSFET P-CH 30V 2.3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4184PFR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 770mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100E-3
100E-6
100E-9
10E-3
10E-6
1E-3
1E-6
0
Figure 15. Typical Reverse Current
V
R
, REVERSE VOLTAGE (V)
T
T
T
1000
J
J
100
J
= 125°C
10
= 85°C
= 25°C
10
0
TYPICAL CHARACTERISTICS
5
V
Figure 17. Capacitance
R
, REVERSE VOLTAGE (V)
http://onsemi.com
NTMD4184PF
10
20
6
100E-3
100E-6
100E-9
10E-3
10E-6
1E-3
1E-6
15
0
T
20
Figure 16. Maximum Reverse Current
J
= 25°C
V
R
, REVERSE VOLTAGE (V)
25
T
T
T
J
J
J
= 125°C
= 85°C
= 25°C
10
20