PUMD3T/R NXP Semiconductors, PUMD3T/R Datasheet - Page 2

• Manufacturer Part Number: PUMD3T/R
• Description: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPN|PNPr

Specifications of PUMD3T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 30@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.15@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PEMD3_PIMD3_PUMD3_10
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
1
2
3
4
5
6
Type number
PEMD3
PIMD3
PUMD3
Type number
PEMD3
PIMD3
PUMD3
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
Package
Name
-
SC-74
SC-88
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Marking code
D3
M7
D*3
PEMD3; PIMD3; PUMD3
Simplified outline
[1]
6
1
5
2
001aab555
4
3
Symbol
© NXP B.V. 2009. All rights reserved.
TR1
6
1
R1
R2
5
006aaa143
Version
SOT666
SOT457
SOT363
R2
2
R1
2 of 11
TR2
4
3