PUMD3T/R NXP Semiconductors, PUMD3T/R Datasheet - Page 7

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PUMD3T/R

Manufacturer Part Number
PUMD3T/R
Description
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPN|PNPr
Datasheet

Specifications of PUMD3T/R

Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
30@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.15@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
NXP Semiconductors
8. Package outline
PEMD3_PIMD3_PUMD3_10
Product data sheet
Fig 9.
Fig 11. Package outline SOT666
2.2
2.0
Dimensions in mm
1.35
1.15
Package outline SOT363 (SC-88)
pin 1
index
1
0.65
6
2.2
1.8
1.3
5
2
4
3
1.7
1.5
0.3
0.2
Dimensions in mm
0.45
0.15
1.3
1.1
pin 1 index
Rev. 10 — 15 November 2009
0.25
0.10
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
1.1
0.8
6
1
0.5
06-03-16
1.7
1.5
1
5
2
Fig 10. Package outline SOT457 (SC-74)
3.0
2.5
3
4
PEMD3; PIMD3; PUMD3
Dimensions in mm
0.27
0.17
1.7
1.3
0.3
0.1
pin 1 index
0.6
0.5
1
6
0.95
0.18
0.08
04-11-08
3.1
2.7
1.9
5
2
4
3
0.40
0.25
© NXP B.V. 2009. All rights reserved.
0.6
0.2
1.1
0.9
0.26
0.10
04-11-08
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