PUMD3T/R NXP Semiconductors, PUMD3T/R Datasheet - Page 5

• Manufacturer Part Number: PUMD3T/R
• Description: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPN|PNPr

Specifications of PUMD3T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 30@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.15@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
PEMD3_PIMD3_PUMD3_10
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
FE
10
10
10
10
−1
3
2
1
1
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): On-state input voltage as a
function of collector current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= 5 V
= 0.3 V
= 150 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
I
I
C
C
006aaa034
(mA)
006aaa036
(mA)
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
10
10
2
2
Fig 2.
Fig 4.
V
V
CEsat
PEMD3; PIMD3; PUMD3
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
10
−1
−2
−1
1
1
10
1
I
TR1 (NPN): Collector-emitter voltage as a
function of collector current; typical values
V
TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
C
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
(1)
(2)
(3)
10
−1
10
(1)
(2)
(3)
1
I
C
(mA)
I
© NXP B.V. 2009. All rights reserved.
C
006aaa035
006aaa037
(mA)
10
10
2
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