PUMD3T/R NXP Semiconductors, PUMD3T/R Datasheet - Page 3

• Manufacturer Part Number: PUMD3T/R
• Description: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPN|PNPr

Specifications of PUMD3T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 30@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.15@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
5. Limiting values
PEMD3_PIMD3_PUMD3_10
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
Reflow soldering is the only recommended soldering method.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
total power dissipation
positive
negative
positive
negative
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Conditions
open emitter
open base
open collector
T
T
PEMD3; PIMD3; PUMD3
amb
amb
≤ 25 °C
≤ 25 °C
[1][3]
[1][3]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
−65
-
−65
-
-
-
© NXP B.V. 2009. All rights reserved.
50
50
10
100
150
Max
+40
−10
+10
−40
100
200
300
200
+150
+150
300
600
300
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
mW
°C
°C
°C
mW
mW
mW
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