BF909,215 NXP Semiconductors, BF909,215 Datasheet
BF909,215
Specifications of BF909,215
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BF909,215 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors N-channel dual gate MOS-FETs FEATURES Specially designed for use supply voltage High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications with supply voltage such as television tuners and professional communications equipment ...
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... NXP Semiconductors N-channel dual gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot BF909 BF909R T storage temperature stg T operating junction temperature ...
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... NXP Semiconductors N-channel dual gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a BF909 BF909R R thermal resistance from junction to soldering point th j-s BF909 BF909R Notes 1. Device mounted on a printed-circuit board the temperature at the soldering point of the source lead. s STATIC CHARACTERISTICS ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 110 handbook, halfpage V unw (dB V) 100 MHz MHz 120 k . unw amb G1 Fig.4 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.18. 30 handbook, halfpage (mA) 1 1.2 V 1 Fig.6 Output characteristics; typical values. ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 60 handbook, halfpage y fs (mS Fig.8 Forward transfer admittance as a function of drain current; typical values. 16 handbook, halfpage I D (mA G2 120 k (connected Fig.10 Drain current as a function of gate 1 supply voltage (= V see Fig.18. MLB940 handbook, halfpage 3 2 (mA Fig.9 MLB942 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 20 handbook, halfpage I D (mA 120 k (connected Fig.12 Drain current as a function of gate 2 voltage; typical values; see Fig.18 handbook, halfpage y is (mS mA amb Fig.14 Input admittance as a function of frequency; typical values. MLB944 handbook, halfpage 120 k (connected Fig ...
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... NXP Semiconductors N-channel dual gate MOS-FETs (mS mA amb Fig.16 Forward transfer admittance and phase as a function of frequency; typical values. R GEN MLB948 2 10 handbook, halfpage y os (mS) fs (deg (MHz mA AGC 4 DUT 4 Fig.18 Cross-modulation test set-up. Rev November 2007 Product specification BF909; BF909R ...
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... NXP Semiconductors N-channel dual gate MOS-FETs Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 50 0.985 6.4 100 0.978 12.6 200 0.957 25.0 300 0.931 36.5 400 0.899 47.6 500 0.868 57.4 600 0.848 66.6 700 0.816 74.6 800 0.792 82.2 900 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs PACKAGE OUTLINES handbook, full pagewidth 0.75 0. max max Dimensions in mm. handbook, full pagewidth 0.40 0. max 1.1 max Dimensions in mm. 3.0 2.8 0.150 1.9 0.090 4 0.1 max o 10 max 1 1 0.88 max 0.1 TOP VIEW Fig.19 SOT143. ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BF909_N_2 20071119 • Modifications: Fig.1 and 2 on page 2; Figure note changed BF909_1 19950425 Data sheet status Change notice Product data sheet - Product specification - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘ ...