BF909,215 NXP Semiconductors, BF909,215 Datasheet - Page 2

• Manufacturer Part Number: BF909,215
• Description: MOSFET N-CH 7V 40MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF909,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 20 mA
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 15 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: Dual N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934028850215::BF909 T/R::BF909 T/R

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
QUICK REFERENCE DATA
handbook, halfpage
V
I
P
T
C
C
F
D
y
j
Specially designed for use at 5 V supply voltage
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DS
tot
ig1-s
rs
N-channel dual gate MOS-FETs
BF909 marking code: %M3.
SYMBOL
fs
Top view
Fig.1 Simplified outline (SOT143) and symbol.
4
1
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
3
2
MAM124
PARAMETER
g
g
2
1
d
Rev. 02 - 19 November 2007
s,b
f = 1 MHz
f = 800 MHz
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
handbook, halfpage
CONDITIONS
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Top view
BF909R marking code: %M4.
PIN
Fig.2 Simplified outline (SOT143R) and symbol.
1
2
3
4
3
2
SYMBOL
1
s, b
g
g
d
4
2
1
36
MAM125 - 1
MIN.
CAUTION
source
drain
gate 2
gate 1
43
3.6
35
2
BF909; BF909R
TYP.
DESCRIPTION
g
g
Product specification
2
1
7
40
200
150
50
4.3
50
2.8
MAX.
d
2 of 12
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b