BF909,215 NXP Semiconductors, BF909,215 Datasheet - Page 7

• Manufacturer Part Number: BF909,215
• Description: MOSFET N-CH 7V 40MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF909,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 20 mA
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 15 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: Dual N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934028850215::BF909 T/R::BF909 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
R
V
I
Fig.12 Drain current as a function of gate 2 voltage;
D
Fig.14 Input admittance as a function of frequency;
DS
G1
DS
(mA)
(mS)
= 15 mA; T
I D
y is
10
= 5 V; T
= 120 k (connected to V
= 5 V; V
10
10
20
16
12
1
8
4
0
2
1
10
0
typical values; see Fig.18.
typical values.
j
G2
= 25 C.
amb
= 4 V.
= 25 C.
2
GG
).
10
2
b is
g is
4
f (MHz)
V
V
GG
G2 S
= 5 V
4.5 V
4 V
3.5 V
3 V
MLB946
MLB944
(V)
Rev. 02 - 19 November 2007
10
6
3
handbook, halfpage
V
R
V
I
D
( S)
DS
DS
Fig.15 Reverse transfer admittance and phase as
G1
y rs
( A)
I G1
= 15 mA; T
10
10
10
= 5 V; T
= 120 k (connected to V
= 5 V; V
Fig.13 Gate 1 current as a function of gate 2
1
40
30
20
10
3
2
10
0
0
a function of frequency; typical values.
j
G2
= 25 C.
amb
voltage; typical values; see Fig.18.
= 4 V.
= 25 C.
2
GG
10
).
2
y rs
BF909; BF909R
rs
4
f (MHz)
Product specification
V
V
GG
G2 S
= 5 V
MLB947
4 V
4.5 V
3.5 V
3 V
MLB945
(V)
10
7 of 12
6
3
10
10
10
1
(deg)
3
rs
2