BF909,215 NXP Semiconductors, BF909,215 Datasheet - Page 4

• Manufacturer Part Number: BF909,215
• Description: MOSFET N-CH 7V 40MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF909,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 20 mA
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 15 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: Dual N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934028850215::BF909 T/R::BF909 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
R
R
V
V
V
V
V
V
I
I
I
C
C
C
C
F
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
SYMBOL
y
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
th j-a
th j-s
= 25 C; unless otherwise specified.
ig1-s
ig2-s
os
rs
N-channel dual gate MOS-FETs
fs
s
G1
is the temperature at the soldering point of the source lead.
connects gate 1 to V
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
BF909
BF909R
BF909
BF909R
amb
PARAMETER
= 25 C; V
PARAMETER
GG
= 5 V; see Fig.18.
PARAMETER
DS
= 5 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
Rev. 02 - 19 November 2007
= 4 V; I
V
V
V
V
V
I
V
V
R
V
V
D
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1
j
= 20 A
= 25 C
D
CONDITIONS
= 120 k ; note 1
= 15 mA; unless otherwise specified.
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= 5 V; V
= 5 V; V
S
CONDITIONS
DS
DS
DS
DS
DS
= G
= 0; I
= 0; I
= 0; I
= 0; I
= 5 V; I
Sopt
DS
DS
G2-S
G1-S
note 1
note 2
T
T
; B
= 5 V;
= 5 V;
s
s
CONDITIONS
G1-S
G2-S
S-G1
S-G2
= 92 C
= 78 C
= V
= V
S
D
= B
= 20 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
DS
DS
Sopt
= 0
= 0
36
MIN.
6
6
0.5
0.5
0.3
0.3
12
MIN.
VALUE
BF909; BF909R
500
550
290
360
43
3.6
2.3
2.3
35
2
TYP.
Product specification
15
15
1
1.2
50
50
1.5
1.5
20
MAX.
50
4.3
3
3
50
2.8
MAX.
4 of 12
UNIT
K/W
K/W
K/W
K/W
V
V
V
V
V
V
mA
nA
nA
UNIT
mS
pF
pF
pF
fF
dB
UNIT