BF909,215 NXP Semiconductors, BF909,215 Datasheet - Page 6

• Manufacturer Part Number: BF909,215
• Description: MOSFET N-CH 7V 40MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF909,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 20 mA
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 15 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: Dual N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934028850215::BF909 T/R::BF909 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
T
V
R
j
DS
DS
G1
(mS)
(mA)
= 25 C.
y fs
I D
Fig.8
= 5 V.
= 5 V; V
= 120 k (connected to V
Fig.10 Drain current as a function of gate 1
16
12
60
40
20
0
8
4
0
0
0
G2-S
Forward transfer admittance as a
function of drain current; typical values.
supply voltage (= V
see Fig.18.
= 4 V.
10
2
GG
); T
j
= 25 C.
GG
20
); typical values;
4
V
G2 S
V
I
D
GG
(mA)
3.5 V
3 V
2.5 V
MLB942
(V)
2 V
= 4 V
MLB940
Rev. 02 - 19 November 2007
30
6
handbook, halfpage
handbook, halfpage
V
T
V
R
Fig.9
j
DS
G2-S
(mA)
G1
= 25 C.
(mA)
I D
I D
= 5 V; V
connected to V
Fig.11 Drain current as a function of gate 1
25
20
15
10
30
20
10
= 4 V.
5
0
0
0
0
Drain current as a function of gate 1 current;
typical values.
G2-S
(= V
typical values; see Fig.18.
= 4 V.
GG
GG
2
; T
R
j
) and drain supply voltage;
G1
20
= 25 C.
= 47 k
4
BF909; BF909R
68 k
V
GG
40
Product specification
= V
6
I
G1
DS
( A)
100 k
120 k
150 k
180 k
220 k
(V)
82 k
MLB943
MLB941
6 of 12
60
8