MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet - Page 5

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MW6S010GNR1

Manufacturer Part Number
MW6S010GNR1
Description
MOSFET RF N-CH 28V 10W TO270-2GW
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MW6S010GNR1

Transistor Type
N-Channel
Frequency
960MHz
Gain
18dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
125mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2 Gull Wing
Drain Source Voltage Vds
68V
Power Dissipation Pd
10W
Operating Frequency Range
450MHz To 1500MHz
Operating Temperature Range
-10°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
20dB
Frequency (min)
450MHz
Frequency (max)
1.5GHz
Package Type
TO-270 EP
Pin Count
3
Input Capacitance (typ)@vds
23@28VpF
Output Capacitance (typ)@vds
10@28VpF
Reverse Capacitance (typ)
0.32@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
61400mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6S010GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
RF Device Data
Freescale Semiconductor
−15
−20
−25
−30
−35
−40
−45
−50
−55
20
19
18
17
16
15
0.1
0.1
V
Two−Tone Measurements
100 kHz Tone Spacing
Figure 6. Intermodulation Distortion Products
DD
V
I
(f1+f2)/2 = Center Frequency = 945 MHz
DQ
DD
= 28 Vdc, f = 945 MHz
Figure 4. Two - Tone Power Gain versus
90 mA
= 125 mA, Two−Tone Measurements
I
= 28 Vdc, P
DQ
= 190 mA
125 mA
P
out
, OUTPUT POWER (WATTS) AVG.
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
5th Order
1
= 10 W (Avg.)
1
Output Power
3rd Order
7th Order
48
44
40
36
32
28
24
20
16
910
V
I
DQ
TYPICAL CHARACTERISTICS
DD
Figure 3. Two - Tone Wideband Performance
10
10
= 125 mA, 100 kHz Tone Spacing
= 28 Vdc, P
920
out
930
= 10 W (Avg.)
IMD
@ P
f, FREQUENCY (MHz)
100
η
100
out
D
IRL
940
= 10 Watts
G
ps
−10
−20
−30
−40
−50
−60
−70
950
48
46
44
42
40
38
0.1
19
V
f = 945 MHz, Two−Tone Measurements
100 kHz Tone Spacing
P1dB = 42.23 dBm (16.71 W)
— 900 MHz
DD
Figure 5. Intermodulation Distortion Products
Figure 7. Pulse CW Output Power versus
= 28 Vdc, I
960
P3dB = 43.14 dBm (20.61 W)
21
P
DQ
out
970
= 125 mA
, OUTPUT POWER (WATTS) AVG.
versus Output Power
P
−8
−10
−12
−14
−16
−18
−20
−22
−24
−26
in
1
, INPUT POWER (dBm)
23
Input Power
MW6S010NR1 MW6S010GNR1
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 945 MHz
DD
= 28 Vdc, I
25
DQ
10
= 125 mA
27
5th Order
3rd Order
7th Order
Ideal
Actual
29
100
5

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