MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet - Page 8

• Manufacturer Part Number: MW6S010GNR1
• Description: MOSFET RF N-CH 28V 10W TO270-2GW
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Drain Source Voltage Vds: 68V
• Power Dissipation Pd: 10W
• Operating Frequency Range: 450MHz To 1500MHz
• Operating Temperature Range: -10°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (min): 450MHz
• Frequency (max): 1.5GHz
• Package Type: TO-270 EP
• Pin Count: 3
• Input Capacitance (typ)@vds: 23@28VpF
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MW6S010NR1 MW6S010GNR1
8
Z
source
f = 800 MHz
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
f = 980 MHz
Z
Z
source
load
Input
Matching
Network
MHz
800
820
840
860
880
900
920
940
960
980
f
V
DD
f = 800 MHz
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
Z
o
gate to ground.
from drain to ground.
= 25 Ω
f = 980 MHz
Z
source
3.1 + j1.9
2.8 + j1.7
2.7 + j2.2
3.1 + j3.4
3.3 + j3.8
2.9 + j3.7
2.8 + j4.4
3.0 + j4.7
3.2 + j4.9
3.6 + j5.2
Z
Z
DQ
source
load
Ω
= 125 mA, P
Device
Under
Test
out
= 10 W PEP
Z
load
10.1 + j2.3
10.6 + j5.6
10.1 + j5.9
11.0 + j6.4
11.8 + j6.6
12.1 + j7.1
8.3 + j2.5
8.2 + j3.3
9.8 + j4.8
9.5 + j5.5
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data