MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet - Page 2

• Manufacturer Part Number: MW6S010GNR1
• Description: MOSFET RF N-CH 28V 10W TO270-2GW
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Drain Source Voltage Vds: 68V
• Power Dissipation Pd: 10W
• Operating Frequency Range: 450MHz To 1500MHz
• Operating Temperature Range: -10°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (min): 450MHz
• Frequency (max): 1.5GHz
• Package Type: TO-270 EP
• Pin Count: 3
• Input Capacitance (typ)@vds: 23@28VpF
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MW6S010NR1 MW6S010GNR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
100 kHz Tone Spacing
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V
Two - Tone Test, 100 kHz Tone Spacing
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
DS
D
D
D
GS
GS
GS
= 100 μAdc)
= 125 mAdc, Measured in Functional Test)
= 0.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Test Methodology
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
DD
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
η
η
= 125 mA, P
3
oss
rss
iss
ps
D
ps
D
= 28 Vdc, I
17.5
DQ
Min
Package Peak Temperature
out
1.5
—
—
—
—
—
—
—
31
—
—
—
—
—
—
2
= 150 mA, P
= 10 W PEP, f = 960 MHz, Two - Tone Test,
0.27
0.32
260
Typ
- 37
- 18
- 40
- 10
2.3
3.1
10
23
18
32
20
33
—
—
—
out
Class
= 10 W PEP, 420 - 470 MHz,
Freescale Semiconductor
1A
III
A
Max
0.35
20.5
- 33
- 10
10
—
—
—
—
—
—
—
—
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
°C
pF
pF
pF
%
%