MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 10
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MRF7S21080HR5
Manufacturer Part Number
MRF7S21080HR5
Description
MOSFET RF N-CH 22W NI-780
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S21080HR3.pdf
(12 pages)
Specifications of MRF7S21080HR5
Transistor Type
N-Channel
Frequency
2.11GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
800mA
Voltage - Test
28V
Power - Output
22W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
22W
Power Gain (typ)@vds
18dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
160@28VpF
Output Capacitance (typ)@vds
296@28VpF
Reverse Capacitance (typ)
0.64@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA/CDMA/TD-SCDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
20 000
MRF7S21080HR3 MRF7S21080HSR3
10
H
A
(FLANGE)
(FLANGE)
4X
E
(FLANGE)
B
H
B
U
B
B
A
E
bbb
bbb
(FLANGE)
(FLANGE)
M
M
A
A
D
T
G
T
D
A
A
1
2
1
2
M
M
B
3
B
2X
M
N
M
M
M
N
T
K
3
(LID)
(INSULATOR)
bbb
ccc
(LID)
(INSULATOR)
bbb
SEATING
PLANE
ccc
C
C
K
4X
(LID)
M
M
2X
M
M
T
Z
T
T
T
T
SEATING
PLANE
Q
A
A
bbb
A
A
M
M
M
M
M
B
B
PACKAGE DIMENSIONS
B
B
T
M
M
M
M
A
MRF7S21080HSR3
MRF7S21080HR3
CASE 465A - 06
M
CASE 465 - 06
B
ISSUE G
ISSUE H
NI - 780S
NI - 780
M
aaa
ccc
aaa
ccc
M
M
M
M
T
T
T
T
A
A
A
A
M
M
M
M
R
R
S
S
B
B
B
B
(LID)
(INSULATOR)
(LID)
(INSULATOR)
M
M
M
M
F
F
NOTES:
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
Y14.5M−1994.
FROM PACKAGE BODY.
Y14.5M−1994.
FROM PACKAGE BODY.
bbb
STYLE 1:
STYLE 1:
DIM
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M
DIM
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A
B
C
D
E
F
G
H
K
N
Q
R
S
A
B
C
D
H
K
M
N
R
U
E
F
S
Z
PIN 1. DRAIN
PIN 1. DRAIN
1.335
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
2. GATE
3. SOURCE
2. GATE
5. SOURCE
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
MIN
.118
MIN
1.100 BSC
0.005 REF
0.010 REF
0.015 REF
−−−
−−−
0.005 REF
0.010 REF
0.015 REF
INCHES
INCHES
1.345
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
MAX
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
.138
MAX
Freescale Semiconductor
33.91
12.57
19.66
19.60
MILLIMETERS
20.45
12.57
19.61
19.61
MIN
9.65
3.18
0.89
0.08
1.45
4.32
3.00
9.27
9.27
MILLIMETERS
MIN
9.65
3.18
0.89
0.08
1.45
4.32
9.27
9.27
27.94 BSC
0.127 REF
0.254 REF
0.381 REF
−−−
−−−
0.127 REF
0.254 REF
0.381 REF
34.16
12.83
19.96
20.00
RF Device Data
MAX
20.70
12.83
20.02
20.02
MAX
9.91
4.32
1.14
0.15
1.70
5.33
3.51
9.53
9.52
9.91
4.32
1.14
0.15
1.70
5.33
9.53
9.52
1.02
0.76