MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 6
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MRF7S21080HR5
Manufacturer Part Number
MRF7S21080HR5
Description
MOSFET RF N-CH 22W NI-780
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S21080HR3.pdf
(12 pages)
Specifications of MRF7S21080HR5
Transistor Type
N-Channel
Frequency
2.11GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
800mA
Voltage - Test
28V
Power - Output
22W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
22W
Power Gain (typ)@vds
18dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
160@28VpF
Output Capacitance (typ)@vds
296@28VpF
Reverse Capacitance (typ)
0.64@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA/CDMA/TD-SCDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
20 000
MRF7S21080HR3 MRF7S21080HSR3
6
20
19
18
17
16
15
14
13
1
800 mA
600 mA
400 mA
1000 mA
Figure 5. Two - Tone Power Gain versus
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
P
out
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
, OUTPUT POWER (WATTS) PEP
Output Power
I
DQ
10
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
= 1200 mA
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
18.8
18.6
18.4
18.2
17.8
17.6
17.4
17.2
18.2
17.8
17.6
17.4
17.2
16.8
16.6
16.4
19
18
17
18
17
2060
2060
Broadband Performance @ P
PARC
PARC
Broadband Performance @ P
G
G
η
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
ps
ps
D
DD
2080
2080
= 28 Vdc, P
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
η
DD
TYPICAL CHARACTERISTICS
D
2100
2100
= 28 Vdc, P
IRL
100
out
= 40 W (Avg.), I
f, FREQUENCY (MHz)
2120
f, FREQUENCY (MHz)
2120
out
200
IRL
= 22 W (Avg.), I
2140
2140
DQ
2160
2160
= 800 mA
out
out
−10
−20
−30
−40
−50
−60
DQ
= 40 Watts Avg.
= 800 mA
= 22 Watts Avg.
2180
2180
1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 10 MHz Tone Spacing
I
DD
DQ
600 mA
2200
2200
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
= 400 mA
1200 mA
800 mA
P
2220
2220
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
34
33
32
31
30
0
−0.5
−1
−1.5
−2
−2.5
45
44
43
42
41
−2
−2.5
−3
−3.5
−4
1000 mA
10
−4
−8
−12
−16
−20
−4
−8
−12
−16
−24
−20
Freescale Semiconductor
RF Device Data
100
200