MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 2
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MRF7S21080HR5
Manufacturer Part Number
MRF7S21080HR5
Description
MOSFET RF N-CH 22W NI-780
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S21080HR3.pdf
(12 pages)
Specifications of MRF7S21080HR5
Transistor Type
N-Channel
Frequency
2.11GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
800mA
Voltage - Test
28V
Power - Output
22W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
22W
Power Gain (typ)@vds
18dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
160@28VpF
Output Capacitance (typ)@vds
296@28VpF
Reverse Capacitance (typ)
0.64@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA/CDMA/TD-SCDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF7S21080HR5
Manufacturer:
FREESCALE
Quantity:
20 000
MRF7S21080HR3 MRF7S21080HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DS
DS
GG
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
= 2 x V
GS(Q)
DS
D
D
D
D
GS
GS
GS
= 174 μAdc)
= 800 mAdc)
= 800 mAdc, Measured in Functional Test)
= 1.74 Adc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(2)
Characteristic
(1)
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
GG(Q)
C
G
IRL
DSS
DSS
GSS
η
= 800 mA, P
oss
rss
iss
ps
D
16.5
Min
out
1.5
0.1
5.7
—
—
—
—
—
—
—
30
—
—
4
= 22 W Avg., f = 2112.5 MHz and f =
0.64
Typ
296
160
- 38
- 16
2.7
5.5
0.2
6.5
18
32
—
—
—
1C (Minimum)
2
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
19.5
- 35
0.3
10
—
—
—
—
—
—
- 9
1
1
3
7
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
pF
%