MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 2

• Manufacturer Part Number: MRF7S21080HR5
• Description: MOSFET RF N-CH 22W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S21080HR3 MRF7S21080HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DS
DS
GG
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
= 2 x V
GS(Q)
DS
D
D
D
D
GS
GS
GS
= 174 μAdc)
= 800 mAdc)
= 800 mAdc, Measured in Functional Test)
= 1.74 Adc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(2)
Characteristic
(1)
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
GG(Q)
C
G
IRL
DSS
DSS
GSS
η
= 800 mA, P
oss
rss
iss
ps
D
16.5
Min
out
1.5
0.1
5.7
—
—
—
—
—
—
—
30
—
—
4
= 22 W Avg., f = 2112.5 MHz and f =
0.64
Typ
296
160
- 38
- 16
2.7
5.5
0.2
6.5
18
32
—
—
—
1C (Minimum)
2
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
19.5
- 35
0.3
10
—
—
—
—
—
—
- 9
1
1
3
7
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
pF
%