MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 7

• Manufacturer Part Number: MRF7S21080HR5
• Description: MOSFET RF N-CH 22W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−20
−30
−40
−50
−60
−70
38
1
Figure 10. Digital Predistortion Correction versus
Figure 7. Intermodulation Distortion Products
Uncorrected
Upper and Lower
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DPD Corrected, with Memory Correction
V
W−CDMA, Input Signal PAR = 7.5 dB
ACPR @ ±5 MHz Offset in 3.84 MHz
Integrated Bandwidth
DD
5th Order
7th Order
DD
3rd Order
39
= 28 Vdc, I
= 28 Vdc, I
40
P
out
DQ
41
ACPR and Output Power
DQ
P
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 800 mA
out
= 800 mA, f = 2140 MHz, Single−Carrier
, OUTPUT POWER (dBm)
42
10
43
44
−1
−2
−3
−4
−5
−6
1
0
10
DPD Corrected
No Memory Correction
45
−1 dB = 21.65 W
V
f = 2140 MHz, Input Signal PAR = 7.5 dB
Compression (PARC) versus Output Power
DD
−2 dB = 20.9 W
Figure 9. Output Peak - to - Average Ratio
= 28 Vdc, I
46
TYPICAL CHARACTERISTICS
100
20
47
P
DQ
out
48
, OUTPUT POWER (WATTS)
= 800 mA
30
400
49
−3 dB = 39.9 W
20
19
18
17
16
15
14
13
40
1
−10
−20
−30
−40
−50
−60
−70
Figure 11. Power Gain and Drain Efficiency
G
η
ps
D
1
Figure 8. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
DD
T
50
C
= 28 Vdc, P
= −30_C
P
versus CW Output Power
25_C
out
85_C
Actual
, OUTPUT POWER (WATTS) CW
Ideal
MRF7S21080HR3 MRF7S21080HSR3
out
IM5−L
versus Tone Spacing
IM5−U
TWO−TONE SPACING (MHz)
60
= 70 W (PEP), I
70
60
50
40
30
20
10
10
0
IM3−L
IM3−U
IM7−U
IM7−L
10
V
I
f = 2140 MHz
DQ
DD
DQ
= 800 mA
= 28 Vdc
= 800 mA
−30_C
100
85_C
25_C
200
70
60
50
40
30
20
10
0
100
7