MRF7S21080HR5 Freescale Semiconductor, MRF7S21080HR5 Datasheet - Page 5

• Manufacturer Part Number: MRF7S21080HR5
• Description: MOSFET RF N-CH 22W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21080HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 800mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 22W
• Power Gain (typ)@vds: 18dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 160@28VpF
• Output Capacitance (typ)@vds: 296@28VpF
• Reverse Capacitance (typ): 0.64@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/CDMA/TD-SCDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
C1
V
GS
C5
R1
Figure 2. MRF7S21080HR3(HSR3) Test Circuit Component Layout
R2
C17 C2
C4
C3
R3
C10
C11
C12
C14
MRF7S21080H
C13
C15
Rev. 1
MRF7S21080HR3 MRF7S21080HSR3
C6
V
DD
C16
C7 C8
C9
5