MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 11
![MOSFET RF N-CH TO-270-4](/photos/5/65/56501/mrf6v2300n_sml.jpg)
MRF6V2300NR1
Manufacturer Part Number
MRF6V2300NR1
Description
MOSFET RF N-CH TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6V2300NBR5.pdf
(19 pages)
Specifications of MRF6V2300NR1
Transistor Type
N-Channel
Frequency
220MHz
Gain
25.5dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
900mA
Voltage - Test
50V
Power - Output
300W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
300W
Power Gain (typ)@vds
31.4dB
Frequency (min)
10MHz
Frequency (max)
600MHz
Package Type
TO-270 WB EP
Pin Count
5
Input Capacitance (typ)@vds
268@50VpF
Output Capacitance (typ)@vds
120@50VpF
Reverse Capacitance (typ)
2.88@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
61.5%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V2300NR1
Manufacturer:
FREESCALE
Quantity:
20 000
RF Device Data
Freescale Semiconductor
f = 450 MHz
Z
f = 450 MHz
Figure 18. Series Equivalent Source and Load Impedance — 27, 450 MHz
load
Z
source
f = 27 MHz
Z
load
Input
Matching
Network
Z
Z
source
load
MHz
450
27
Z
f
o
= 25 Ω
V
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DD
gate to ground.
drain to ground.
Z
= 50 Vdc, I
source
10.5 + j19.0
0.50 + j1.37
Z
Device
Under
Test
source
DQ
Ω
= 900 mA, P
Z
load
out
f = 27 MHz
= 300 W CW
Z
source
3.50 + j0.19
1.25 + j0.99
Z
Output
Matching
Network
load
Ω
MRF6V2300NR1 MRF6V2300NBR1
11