MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 11

• Manufacturer Part Number: MRF6V2300NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2300NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25.5dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 31.4dB
• Frequency (min): 10MHz
• Frequency (max): 600MHz
• Package Type: TO-270 WB EP
• Pin Count: 5
• Input Capacitance (typ)@vds: 268@50VpF
• Output Capacitance (typ)@vds: 120@50VpF
• Reverse Capacitance (typ): 2.88@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 61.5%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
f = 450 MHz
Z
f = 450 MHz
Figure 18. Series Equivalent Source and Load Impedance — 27, 450 MHz
load
Z
source
f = 27 MHz
Z
load
Input
Matching
Network
Z
Z
source
load
MHz
450
27
Z
f
o
= 25 Ω
V
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DD
gate to ground.
drain to ground.
Z
= 50 Vdc, I
source
10.5 + j19.0
0.50 + j1.37
Z
Device
Under
Test
source
DQ
Ω
= 900 mA, P
Z
load
out
f = 27 MHz
= 300 W CW
Z
source
3.50 + j0.19
1.25 + j0.99
Z
Output
Matching
Network
load
Ω
MRF6V2300NR1 MRF6V2300NBR1
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