MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 18

• Manufacturer Part Number: MRF6V2300NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2300NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25.5dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 31.4dB
• Frequency (min): 10MHz
• Frequency (max): 600MHz
• Package Type: TO-270 WB EP
• Pin Count: 5
• Input Capacitance (typ)@vds: 268@50VpF
• Output Capacitance (typ)@vds: 120@50VpF
• Reverse Capacitance (typ): 2.88@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 61.5%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

18
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
MRF6V2300NR1 MRF6V2300NBR1
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
4
5
Feb. 2007
Feb. 2007
Dec. 2008
May 2007
Jan. 2008
Apr. 2010
Date
• Initial Release of Data Sheet
• Added Fig. 1, Pin Connections, p. 1
• Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1
• Added Max value to Power Gain, Table 5, Functional Tests, p. 2
• Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,
• Increased operating frequency to 600 MHz, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Corrected C
• Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
• Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
• Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
• Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2
• Added Figs. 16 and 17, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test
• Added Fig. 18, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 11
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
C19, C5, C18, C9, C12, C14, and C23, p. 3
Dynamic Characteristics table, p. 2
on Sheet 1.
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 9, 10
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
p. 18
PRODUCT DOCUMENTATION AND SOFTWARE
iss
test condition to indicate AC stimulus on the V
REVISION HISTORY
Description
GS
connection versus the V
Freescale Semiconductor
DS
RF Device Data
connection,