MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 6
![MOSFET RF N-CH TO-270-4](/photos/5/65/56501/mrf6v2300n_sml.jpg)
MRF6V2300NR1
Manufacturer Part Number
MRF6V2300NR1
Description
MOSFET RF N-CH TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6V2300NBR5.pdf
(19 pages)
Specifications of MRF6V2300NR1
Transistor Type
N-Channel
Frequency
220MHz
Gain
25.5dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
900mA
Voltage - Test
50V
Power - Output
300W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
300W
Power Gain (typ)@vds
31.4dB
Frequency (min)
10MHz
Frequency (max)
600MHz
Package Type
TO-270 WB EP
Pin Count
5
Input Capacitance (typ)@vds
268@50VpF
Output Capacitance (typ)@vds
120@50VpF
Reverse Capacitance (typ)
2.88@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
61.5%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V2300NR1
Manufacturer:
FREESCALE
Quantity:
20 000
6
MRF6V2300NR1 MRF6V2300NBR1
28
26
24
22
20
18
16
14
0
Figure 10. Power Gain versus Output Power
V
DD
50
= 20 V
100
P
25 V
out
, OUTPUT POWER (WATTS) CW
150
30 V
200
35 V
29
28
27
26
25
24
23
22
25
24
23
22
21
20
19
18
17
16
15
Figure 13. VHF Broadcast Broadband Performance
250
160
5
40 V
25_C
IMD3
η
Figure 12. Power Gain and Drain Efficiency
G
D
ps
300
170
T
V
I
C
DQ
TYPICAL CHARACTERISTICS
10
DD
I
f = 220 MHz
= --30_C
45 V
DQ
= 1100 mA, Tone--Spacing = 100 kHz
= 50 V, P
85_C
= 900 mA
350
180
P
versus CW Output Power
out
50 V
, OUTPUT POWER (WATTS) CW
out
η
f, FREQUENCY (MHz)
400
190
D
= 300 W (Peak)
G
ps
200
210
100
60
55
50
45
40
35
V
f = 220 MHz
10
85_C
I
DQ
DD
= 900 mA
= 50 Vdc
220
Figure 11. Power Output versus Power Input
25_C
15
230
--30_C
600
240
P
in
80
70
60
50
40
30
20
10
65
60
55
50
45
40
35
30
25
20
15
, INPUT POWER (dBm)
20
25_C
Freescale Semiconductor
--28
--29
--30
--31
--32
--33
25
T
C
= --30_C
85_C
V
I
f = 220 MHz
RF Device Data
DQ
DD
= 900 mA
30
= 50 Vdc
35