MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 5

• Manufacturer Part Number: MRF6V2300NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2300NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25.5dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 31.4dB
• Frequency (min): 10MHz
• Frequency (max): 600MHz
• Package Type: TO-270 WB EP
• Pin Count: 5
• Input Capacitance (typ)@vds: 268@50VpF
• Output Capacitance (typ)@vds: 120@50VpF
• Reverse Capacitance (typ): 2.88@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 61.5%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
1000
10
100
9
8
7
6
5
4
3
2
1
0
10
Figure 4. Capacitance versus Drain- -Source Voltage
Figure 6. DC Drain Current versus Drain Voltage
1
0
--15
--20
--25
--30
--35
--40
--45
--50
--55
0
1
Figure 8. Third Order Intermodulation Distortion
V
Two--Tone Measurements, 100 kHz Tone Spacing
DD
20
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
I
DQ
10
= 450 mA
650 mA
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
DRAIN VOLTAGE (VOLTS)
P
40
out
versus Output Power
C
C
, OUTPUT POWER (WATTS) PEP
C
oss
iss
rss
10
20
Measured with ±30 mV(rms)ac @ 1 MHz
V
GS
60
= 0 Vdc
1125 mA
2.5 V
30
80
900 mA
2.63 V
1350 mA
TYPICAL CHARACTERISTICS
100
V
GS
100
40
2.75 V
= 3 V
2.25 V
120
50
600
60
58
56
54
52
50
28
27
26
25
24
23
22
100
10
24
10
1
Figure 9. CW Output Power versus Input Power
1
650 mA
450 mA
900 mA
Figure 7. CW Power Gain versus Output Power
1125 mA
T
P1dB = 55.04 dBm (319 W)
C
= 25°C
26
Figure 5. DC Safe Operating Area
I
DQ
V
DS
= 1350 mA
P
out
, DRAIN--SOURCE VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS) CW
P
P3dB = 55.76 dBm (377 W)
in
MRF6V2300NR1 MRF6V2300NBR1
, INPUT POWER (dBm)
28
10
V
f = 220 MHz
100
DD
30
= 50 Vdc, I
V
f1 = 220 MHz
DD
= 50 Vdc
DQ
32
= 900 mA
100
Actual
Ideal
600
34
5