MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 4

• Manufacturer Part Number: MRF6V2300NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2300NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25.5dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 31.4dB
• Frequency (min): 10MHz
• Frequency (max): 600MHz
• Package Type: TO-270 WB EP
• Pin Count: 5
• Input Capacitance (typ)@vds: 268@50VpF
• Output Capacitance (typ)@vds: 120@50VpF
• Reverse Capacitance (typ): 2.88@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 61.5%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

4
MRF6V2300NR1 MRF6V2300NBR1
* Stacked
C1
C12
+
Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout — 220 MHz
C2
B1
C10
C11
C13
C3
C7
R2 R3
B2
C9
C4
C5
C6
C8
R1
C15*
C16*
C19
C18
C17
L1
C14
L2
MRF6V2300N/NB
Rev. 3
B3
Freescale Semiconductor
C21
C20
C23
+
C22
RF Device Data