BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-200,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895118; BLF6G10LS-200 /T3; BLF6G10LS-200 /T3

NXP Semiconductors
BLF6G10LS-200_1
Preliminary data sheet
7.2 One-tone CW
7.3 Two-tone CW
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load
V
typical values
V
power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
= 1400 mA; f = 894 MHz.
= 1400 mA; f
(dB)
(dB)
Rev. 01 — 18 January 2008
G
G
p
p
22
21
20
19
18
17
16
15
22
20
18
16
0
0
50
1
40
= 893.95 MHz; f
G
D
p
G
D
p
100
80
150
120
2
200
= 894.05 MHz.
160
250
BLF6G10LS-200
200
001aah526
001aah534
P
300
L(PEP)
P
L
(W)
240
350
(W)
Power LDMOS transistor
70
60
50
40
30
20
10
0
60
40
20
0
(%)
(%)
D
D
© NXP B.V. 2008. All rights reserved.
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