BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 6
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G10LS-200,118
Manufacturer Part Number
BLF6G10LS-200,118
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10LS-200,118
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895118
BLF6G10LS-200 /T3
BLF6G10LS-200 /T3
BLF6G10LS-200 /T3
BLF6G10LS-200 /T3
NXP Semiconductors
8. Test information
BLF6G10LS-200_1
Preliminary data sheet
Fig 7. Test circuit for operation at 800 MHz
Fig 8. Component layout
input
50
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
Table 8
Table 8
for list of components.
for list of components.
V
GG
R3
R2
C2
C2
C1
C14
800 -1000 MHz
C1
C14
C15
NXP
V1.0
IN
Rev. 01 — 18 January 2008
R2
C15
R1
Q3
C6
C8
C7
C9
C18
C19
800 -1000 MHz
C6
C3
C4
NXP
OUT
V1.0
C7
C8
C9
C3 C10
C10
C11
C4
C11
BLF6G10LS-200
C12
R1
L1
C13
r
r
= 3.5 and
= 3.5 and
Power LDMOS transistor
C13
L1
C12
V
DD
© NXP B.V. 2008. All rights reserved.
C20
R3
C5
C20
C5
001aah539
001aah540
output
50
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