BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 7
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G10LS-200,118
Manufacturer Part Number
BLF6G10LS-200,118
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10LS-200,118
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895118
BLF6G10LS-200 /T3
BLF6G10LS-200 /T3
BLF6G10LS-200 /T3
BLF6G10LS-200 /T3
NXP Semiconductors
Table 8.
All capacitors should be soldered vertically except C20.
[1]
[2]
BLF6G10LS-200_1
Preliminary data sheet
Component
C1, C2, C3, C4, C5 multilayer ceramic chip capacitor
C6, C7, C8, C9
C10, C11
C12, C13
C14
C15
C18, C19
C20
L1
Q1
R1, R2, R3
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
List of components (see
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Ferrite SMD bead
BLC6G10LS-160
SMD resistor
Figure 7
and
Rev. 01 — 18 January 2008
Figure
8)
Value
68 pF
330 nF
4.7 F
220 F; 63 V
4.7 pF; 50 V
9.1 pF
10 pF
1.5 pF; 20 V
-
-
9.1 ; 0.1 W
[1]
[2]
[2]
[1]
[1]
[1]
[1]
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
BLF6G10LS-200
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
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