BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet
BFR520T,115
Specifications of BFR520T,115
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BFR520T,115 Summary of contents
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DATA SHEET BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 DISCRETE SEMICONDUCTORS M3D173 2000 Apr 03 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT416 (SC-75) package. APPLICATIONS Wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies GHz ...
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... NXP Semiconductors NPN 9 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 200 P tot (mW) 150 100 100 Fig.2 Power derating curve. 0.7 handbook, halfpage C re (pF) 0.6 0.5 0.4 0.3 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 2000 Apr 03 MGU068 handbook, halfpage 150 200 T s (° ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 20 handbook, halfpage G UM (dB 900 MHz amb G = maximum unilateral power gain. UM MSG = maximum stable gain maximum available gain. max Fig.6 Maximum unilateral power gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG − ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 4 handbook, halfpage F (dB amb Fig.10 Minimum noise figure as a function of collector current; typical values. 2000 Apr 03 MRC029 handbook, halfpage F (dB GHz 900 MHz 500 MHz (mA Fig.11 Minimum noise figure as a function of 6 Product specification ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth pot. unst. region 180° mA 900 MHz Fig.12 Common emitter noise figure circles; typical values. handbook, full pagewidth 180° G max = 9 mA GHz Fig.13 Common emitter noise figure circles; typical values. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.14 Common emitter input reflection coefficient (s handbook, full pagewidth 180° mA Fig.15 Common emitter forward transmission coefficient (s 2000 Apr 03 90° 1 135° 0.5 0.2 3 GHz 0.2 0 0.2 0.5 − ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.16 Common emitter reverse transmission coefficient (s handbook, full pagewidth 180° mA Fig.17 Common emitter output reflection coefficient (s 2000 Apr 03 90° 135° 3 GHz 40 MHz 0.5 0.4 0.3 0.2 0.1 − ...
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... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 0.95 mm 0.1 0.15 0.10 0.60 OUTLINE VERSION IEC SOT416 2000 Apr 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 0.7 1.45 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...