BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet - Page 2

• Manufacturer Part Number: BFR520T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR520T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 150mW
• Current - Collector (ic) (max): 70mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Noise Figure (db Typ @ F): 1.1dB ~ 1.6dB @ 900MHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-75
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934055892115::BFR520T T/R::BFR520T T/R

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
 SOT416 (SC-75) package.
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 Apr 03
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
FE
excellent reliability
stg
j
CBO
CES
tot
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
T
open emitter
R
open collector
up to T
C
C
C
C
amb
amb
amb
BE
BE
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 5 mA; V
= 0
= 0
base
emitter
collector
= 25 C
= 25 C
= 25 C
s
s
= 75 C; note 1
= 75 C; note 1
DESCRIPTION
CONDITIONS
CONDITIONS
2
CE
CE
CE
CE
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
j
= 25 C
lfpage
Marking code: N2.




60








65

MIN.
MIN.
Top view
Fig.1 SOT416.
1




120
9
15
1.1
TYP.
Product specification
20
15
2.5
70
150
+150
150
MAX.
3
BFR520T
20
15
70
150
250


1.6
MAX.
MBK090
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT